China Dynamic Random Access Memory (DRAM) Market Share

Market Share of China Dynamic Random Access Memory (DRAM) Industry

The dynamic random access memory market in China is competitive and dominated by established players. Although the market is witnessing the emergence of new players, especially local players, the global players are expected to continue to dominate the market for now. Vendors are adopting several strategies, including new product developments, partnerships, mergers, and acquisitions, to expand their market presence further. Some key market players include Samsung Electronics Co. Ltd, Micron Technology Inc., Sk hynix Inc., and ChangXin Memory Technologies Inc.

• May 2023 - SK hynix, a leading manufacturer of DRAMs, announced the expansion of its legacy processes in its Wuxi, China fab, instead of transitioning to more advanced production processes focusing on DDR3 and DDR4 4Gb products, due to the US ban imposed on semiconductor manufacturing equipment in the country.
• July 2022 - Samsung, a leading provider of DRAM chips in China and globally, developed a new graphics dynamic random-access memory (DRAM) chip with improved power efficiency and faster speed. According to the company, the 24-gigabit Graphics Double Data Rate 6 (GDDR6) boasts a data processing speed that is over 30% faster than existing products and adopts third-generation, 10-nanometer technology.

China Dynamic Random Access Memory (DRAM) Market Leaders

1. Samsung Electronics Co. Ltd

2. Micron Technology Inc.

3. SK Hynix Inc.

4. ChangXin Memory Technologies, Inc.

5. Winbond Electronics (Suzhou) Limited

*Disclaimer: Major Players sorted in no particular order