Japan Power Transistor Market Size
| Study Period | 2019 - 2029 |
| Base Year For Estimation | 2023 |
| Market Size (2024) | USD 3.08 Billion |
| Market Size (2029) | USD 3.66 Billion |
| CAGR (2024 - 2029) | 3.50 % |
| Market Concentration | Low |
Major Players
*Disclaimer: Major Players sorted in no particular order |
Japan Power Transistor Market Analysis
The Japan Power Transistor Market size is estimated at USD 3.08 billion in 2024, and is expected to reach USD 3.66 billion by 2029, growing at a CAGR of 3.5% during the forecast period (2024-2029).
In Japan, the automotive industry accounts for a significant share of the total demand for semiconductors in the country, having emerged as the 5th largest automobile market in 2022, as per the German Association of the Automotive Industry or VDA. The automotive industry's migration from fossil fuel vehicles to hybrid and electric vehicles drives the demand for power devices.
- As per the collaboration, an IGBT line would be installed at USJC's wafer fab, which would be the first in Japan to produce IGBTs on 300mm wafers. DENSO would contribute its system-oriented IGBT device and process technologies.
- At the same time, USJC will provide its 300mm wafer manufacturing capabilities to bring the 300 mm IGBT process into mass production, scheduled to start in the first half of 2023. IGBTs are perceived as core devices in power cards, serving as efficient power switches in inverters to convert DC and AC currents to drive and control electric vehicle motors.
- Further, in February 2022, Toshiba Electronic Devices & Storage Corporation announced that it would construct a new 300-millimeter wafer fabrication facility for power semiconductors, including transistors at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, its main discrete semiconductor production base. Construction is expected to occur in two phases, with the production start of Phase 1 scheduled for 2024. When Phase 1 reaches total capacity, Toshiba's power semiconductor production capacity will be 2.5 times that of fiscal 2021.
- Also, in January 2022, Toshiba Electronic Devices & Storage Corporation launched two silicon carbide (SiC) MOSFET dual modules: 'MG600Q2YMS3', with a voltage rating of 1200V and drain current rating of 600A and 'MG400V2YMS3', with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings joined the previously released MG800FXF2YMS3 in a 1200V, 1700V, and 3300V devices lineup.
Japan Power Transistor Market Trends
Consumer Electronics is Expected to Hold Significant Market Share
- Power transistors primarily aim to switch electric currents quickly while incurring the fewest switching losses. Insulated gate bipolar transistors (IGBTs) are found in various consumer electronics applications. For large applications like air conditioners, refrigerators, washing machines, microwave ovens, induction cooktops, and dishwashers, IGBT-based circuits are appropriate.
- Due to the growing use of inverters in air conditioners and the need to reduce power consumption in large-scale power supplies for household equipment, there is an increasing demand for highly efficient switching devices in consumer home appliances that consume a significant amount of electricity. The need for IGBTs is rising due to the increased demand for low-loss switching devices and higher switching frequencies in PFC circuits.
- For example, in March 2023, Toshiba Electronic Devices & Storage Corporation introduced the "GT30J65MRB," a 650V discrete insulated gate bipolar transistor (IGBT) for power factor correction (PFC) circuits in air conditioners and ample power supplies for industrial equipment. The GT30J65MRB from Toshiba is the company's first IGBT for PFC intended for use below 60 kHz. This was accomplished by lowering switching loss (turn-off switching loss) to ensure higher frequency operation.
- Additionally, homes frequently use electric automatic washing machines to clean household laundry. The power supplied by the power transistor can be used to control the motor's speed and rotational direction in the washing machines. The amount of water and motor torque can be adjusted to fit the washing load due to inverter control with power transistors, reducing wash/spin noise and vibration.
- Further, most consumers today are searching for advanced features that meet their needs for health and hygiene while being energy-efficient. Due to a spike in demand brought on by the recent heatwave that affected many areas of the world and the pent-up demand from the previous two summers, which was impacted by the COVID-19-induced lockdowns, manufacturers of air conditioners and refrigerators increased production to their total capacity. The increase in sales of ACs and refrigerators is expected to fuel the power transistor demand.
Automotive Sector is Expected to Drive the Market
- The automotive industry accounts for a significant share of the total demand for semiconductors in the country. The automotive industry's migration from fossil fuel vehicles to hybrid and electric vehicles drives strong demand for power transistors. The leading power transistor makers compete to develop higher-performance devices on new materials such as SiC and GaN.
- In April 2022, DENSO Corporation, a mobility supplier, and United Semiconductor Japan Co., Ltd., a subsidiary of global semiconductor foundry United Microelectronics Corporation, announced that the companies have agreed to collaborate on the production of power semiconductors at USJC's 300mm fab to serve the growing demand in the automotive market.
- Research and Development activities also continue to rise in the region, which will help foster product innovation. For instance, in July 2022, the United States and Japan recently decided to launch a new joint international semiconductor research hub. They agreed to work on collaborative research for next-generation semiconductors, which will drive the studied market in the country.
- In December 2022, Nidec-Read Corporation announced that it had launched NATS-1000, fully automatic inline semiconductor inspection equipment, to test the functions of automotive IGBT (insulated gate bipolar transistor) /SiC (silicon carbide) modules.
- Further, in September 2022, onsemi, a provider of intelligent power and sensing technologies, announced a trio of silicon carbide (SiC) based power transistor modules in transfer molded technology that is intended for use in onboard charging and high voltage (HV) DCDC conversion within all types of electric vehicles (xEV). The APM32 series is the first-of-its-kind that adopts SiC technology into a transfer molded package to enhance efficiency and shorten the charge time of xEVs and is specifically designed for high-power 11-22kW onboard chargers (OBC).
Japan Power Transistor Industry Overview
The Japan power transistor market is fragmented and is expected to grow in competition during the forecast period owing to the entry of several MNCs. The vendors are focusing on developing customized solution portfolios to fulfill local requirements. Major players operating in the market include Champion Microelectronics Corporation, Fairchild Semiconductor International Inc., Infineon Technologies AG, Renesas Electronics Corporation, NXP Semiconductors N.V., Texas Instruments Inc., STMicroelectronics N.V., Linear Integrated Systems Inc., Mitsubishi Electric Corporation, etc.
In January 2023, Toshiba Electronic Devices & Storage Corporation launched automotive 40V N-channel power MOSFETs -'XPQR3004PB' and 'XPQ1R004PB' - that use the new L-TOGL (large transistor outline gull-wing leads) package and feature a high drain current rating with low on-resistance.
In June 2022, Mitsubishi Electric Corporation unveiled a new IGBT module for applications in large-scale PV installations. The company claims the device helps to reduce the number of inverters needed in grid-connected PV installations while providing for simultaneous high-voltage operation and low power losses.
Japan Power Transistor Market Leaders
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Champion Microelectronics Corporation
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Fairchild Semiconductor International Inc.
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Infineon Technologies AG
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Renesas Electronics Corporation
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NXP Semiconductors N.V.
*Disclaimer: Major Players sorted in no particular order
Japan Power Transistor Market News
- April 2024: Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode (FWD) function. The new HPnC X series 1700 V, 3,300 V Class module, which will be available in June, is designed for large power converters between DC 1700 V and 3.3 kV.
- February 2024: Mitsubishi Electric Corporation has announced its latest product: a 6.5W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect transistor (MOSFET). This component, designed for RF high-power amplifiers in commercial handheld two-way radios (walkie-talkies), is scheduled for sample shipments starting February 28. The MOSFET delivers 6.5W output power while operating on 3.6V from a single-cell lithium-ion battery. This development aims to extend the communication range and reduce power consumption for commercial radio equipment.
Japan Power Transistor Market Report - Table of Contents
1. INTRODUCTION
- 1.1 Study Assumptions and Market Definition
- 1.2 Scope of the Study
2. RESEARCH METHODOLOGY
3. EXECUTIVE SUMMARY
4. MARKET INSIGHTS
- 4.1 Market Overview
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4.2 Industry Attractiveness - Porter's Five Forces Analysis
- 4.2.1 Threat of New Entrants
- 4.2.2 Bargaining Power of Buyers
- 4.2.3 Bargaining Power of Suppliers
- 4.2.4 Threat of Substitute Products
- 4.2.5 Intensity of Competitive Rivalry
- 4.3 Assessment of Impact of COVID-19 on the Market
5. MARKET DYNAMICS
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5.1 Market Drivers
- 5.1.1 Rise in Demand for Connected Devices
- 5.1.2 Surging Usage of Fossil Fuels has Increasing Demand for Power-Efficient Electronic Devices
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5.2 Market Restraints
- 5.2.1 Limitations in Operations due to Constraints like Temperature, Frequency, Reverse Blocking Capacity, etc.
6. MARKET SEGMENTATION
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6.1 By Product
- 6.1.1 Low-Voltage FETs
- 6.1.2 IGBT Modules
- 6.1.3 RF and Microwave Transistors
- 6.1.4 High Voltage FETs
- 6.1.5 IGBT Transistors
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6.2 By Type
- 6.2.1 Bipolar Junction Transistor
- 6.2.2 Field Effect Transistor
- 6.2.3 Heterojunction Bipolar Transistor
- 6.2.4 Others (MOSFET, JFET, NPN Transistor, PNP Transistor, GaN transistor)
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6.3 By End-user Industry
- 6.3.1 Consumer Electronics
- 6.3.2 Communication and Technology
- 6.3.3 Automotive
- 6.3.4 Manufacturing
- 6.3.5 Energy & Power
- 6.3.6 Other End-user Industries
7. COMPETITIVE LANDSCAPE
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7.1 Company Profiles
- 7.1.1 Champion Microelectronics Corporation
- 7.1.2 Fairchild Semiconductor International Inc.
- 7.1.3 Infineon Technologies AG
- 7.1.4 Renesas Electronics Corporation
- 7.1.5 NXP Semiconductors N.V.
- 7.1.6 Texas Instruments Inc.
- 7.1.7 STMicroelectronics N.V.
- 7.1.8 Linear Integrated Systems Inc.
- 7.1.9 Mitsubishi Electric Corporation
- 7.1.10 Toshiba Corporation
- 7.1.11 Vishay Intertechnology Inc.
- 7.1.12 Analog Devices Inc.
- 7.1.13 Broadcom Inc.
- *List Not Exhaustive
8. INVESTMENT ANALYSIS
9. FUTURE OF THE MARKET
** Subject To AvailablityJapan Power Transistor Industry Segmentation
The power transistors are used to amplify and regulate signals. They are made from high-performance semiconductor materials like germanium and silicon. These transistors can amplify and control a certain voltage level and handle specific ranges of high-level and low-level voltage ratings.
The study includes different products low-voltage FETs, IGBT modules, RF and microwave transistors, high-voltage FETs, IGBT transistors, and different types such as bipolar junction transistors, field effect transistors, heterojunction bipolar transistors for various end-user industries like consumer electronics, communication, and technology, automotive, manufacturing, and energy & power. The competitive landscape takes into account multiple companies' market penetration, as well as their organic and inorganic growth strategies.
For all of the above segments, market sizes, and forecasts are provided in terms of value (USD).
| By Product | Low-Voltage FETs |
| IGBT Modules | |
| RF and Microwave Transistors | |
| High Voltage FETs | |
| IGBT Transistors | |
| By Type | Bipolar Junction Transistor |
| Field Effect Transistor | |
| Heterojunction Bipolar Transistor | |
| Others (MOSFET, JFET, NPN Transistor, PNP Transistor, GaN transistor) | |
| By End-user Industry | Consumer Electronics |
| Communication and Technology | |
| Automotive | |
| Manufacturing | |
| Energy & Power | |
| Other End-user Industries |
Japan Power Transistor Market Research Faqs
How big is the Japan Power Transistor Market?
The Japan Power Transistor Market size is expected to reach USD 3.08 billion in 2024 and grow at a CAGR of 3.5% to reach USD 3.66 billion by 2029.
What is the current Japan Power Transistor Market size?
In 2024, the Japan Power Transistor Market size is expected to reach USD 3.08 billion.
Who are the key players in Japan Power Transistor Market?
Champion Microelectronics Corporation, Fairchild Semiconductor International Inc., Infineon Technologies AG, Renesas Electronics Corporation and NXP Semiconductors N.V. are the major companies operating in the Japan Power Transistor Market.
What years does this Japan Power Transistor Market cover, and what was the market size in 2023?
In 2023, the Japan Power Transistor Market size was estimated at USD 2.97 billion. The report covers the Japan Power Transistor Market historical market size for years: 2019, 2020, 2021, 2022 and 2023. The report also forecasts the Japan Power Transistor Market size for years: 2024, 2025, 2026, 2027, 2028 and 2029.
Japan Power Transistor Industry Report
Statistics for the 2024 Japan Power Transistor market share, size and revenue growth rate, created by Mordor Intelligence™ Industry Reports. Japan Power Transistor analysis includes a market forecast outlook to for 2024 to 2029) and historical overview. Get a sample of this industry analysis as a free report PDF download.
