How big is the Japan Power Transistor Market?

The Japan Power Transistor Market size is expected to reach USD 3.08 billion in 2024 and grow at a CAGR of 3.5% to reach USD 3.66 billion by 2029. Read More

What is the current Japan Power Transistor Market size?

In 2024, the Japan Power Transistor Market size is expected to reach USD 3.08 billion. Read More

Who are the key players in Japan Power Transistor Market?

Champion Microelectronics Corporation, Fairchild Semiconductor International Inc., Infineon Technologies AG, Renesas Electronics Corporation and NXP Semiconductors N.V. are the major companies operating in the Japan Power Transistor Market. Read More

What years does this Japan Power Transistor Market cover, and what was the market size in 2023?

In 2023, the Japan Power Transistor Market size was estimated at USD 2.97 billion. The report covers the Japan Power Transistor Market historical market size for years: 2019, 2020, 2021, 2022 and 2023. The report also forecasts the Japan Power Transistor Market size for years: 2024, 2025, 2026, 2027, 2028 and 2029. Read More

Japan Power Transistor Market Size & Share Analysis - Industry Research Report

Japan Power Transistor Market Size & Share Analysis - Growth Trends & Forecasts (2024 - 2029)

The Japan Power Transistor Market is Segmented by Product (Low-Voltage FETs, IGBT Modules, RF and Microwave Transistors, High Voltage FETs, and IGBT Transistors), Type (Bipolar Junction Transistor, Field Effect Transistor, Heterojunction Bipolar Transistor, and Other Types), and End-User Industry (Consumer Electronics, Communication and Technology, Automotive, Manufacturing, Energy & Power, and Other End-User Industries). The Market Sizes and Forecasts are Provided in Terms of Value (USD) for all the Above Segments.

Japan Power Transistor Industry Overview

The Japan power transistor market is fragmented and is expected to grow in competition during the forecast period owing to the entry of several MNCs. The vendors are focusing on developing customized solution portfolios to fulfill local requirements. Major players operating in the market include Champion Microelectronics Corporation, Fairchild Semiconductor International Inc., Infineon Technologies AG, Renesas Electronics Corporation, NXP Semiconductors N.V., Texas Instruments Inc., STMicroelectronics N.V., Linear Integrated Systems Inc., Mitsubishi Electric Corporation, etc.

In January 2023, Toshiba Electronic Devices & Storage Corporation launched automotive 40V N-channel power MOSFETs -'XPQR3004PB' and 'XPQ1R004PB' - that use the new L-TOGL (large transistor outline gull-wing leads) package and feature a high drain current rating with low on-resistance.

In June 2022, Mitsubishi Electric Corporation unveiled a new IGBT module for applications in large-scale PV installations. The company claims the device helps to reduce the number of inverters needed in grid-connected PV installations while providing for simultaneous high-voltage operation and low power losses.